“OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN/InN/GaN/ In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS” (2019) Nigerian Journal of Technology, 38(2), pp. 503–511. Available at: https://mail.nijotech.com/index.php/nijotech/article/view/1997 (Accessed: 19 April 2026).