“OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN InN GaN In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS”. 2019. Nigerian Journal of Technology 38 (2): 503-11. https://mail.nijotech.com/index.php/nijotech/article/view/1997.