OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN/InN/GaN/ In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. Nigerian Journal of Technology, [S. l.], v. 38, n. 2, p. 503–511, 2019. Disponível em: https://mail.nijotech.com/index.php/nijotech/article/view/1997. Acesso em: 19 apr. 2026.