OPTIMIZATION OF INSULATED HfO2 DIELECTRICS OF GaN/InN/GaN/ In0.1Ga0.9N ENHANCEMENT MODE OF MIS-HEMT HETEROSTRUCTURE FOR HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. NIJOTECH. 2019;38(2):503-511. Accessed April 19, 2026. https://mail.nijotech.com/index.php/nijotech/article/view/1997